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Search Results: 1 - 10 of about 53 for 2SC1815
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1. 2SC1815 Continental Device India Limited TO-92 NPN Plastic Package Transistors Datasheet
76.5 Kb, 1 Pg.

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2. 2SC1815 Continental Device India Limited Semiconductor Device Data Book 1996 Datasheet
103.52 Kb, 1 Pg.

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3. 2SC1815 Micro Commercial Components NPN Silicon Epitaxial Transistor Datasheet
74.93 Kb, 1 Pg.

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4. 2SC1815 Micro Electronics Semiconductor Device Data Book Datasheet
29.49 Kb, 1 Pg.

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5. 2SC1815 Micro Electronics NPN SILICON EPITAXIAL TRANSISTOR Datasheet
168.76 Kb, 2 Pg.

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6. 2SC1815 Micro Electronics Low Level and General Purpose Transistors Datasheet
112.86 Kb, 1 Pg.

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7. 2SC1815 N/A AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATION DRIVER STAGE AMPLIFIER APPLICATION Datasheet
209.64 Kb, 3 Pg.

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8. 2SC1815 N/A The Japanese Transistor Manual 1981 Datasheet
107.76 Kb, 2 Pg.

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9. 2SC1815 N/A Datasheet
209.64 Kb, 3 Pg.

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10. 2SC1815 N/A The Transistor Manual (Japanese) 1993 Datasheet
105 Kb, 2 Pg.

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Contextual Search Results: 1 - 10 of about 118 for 2SC1815
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1. Abstract: .. Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A .. 71.5 Kb 2 pg. Datasheet

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2. Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2SC1815 NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 4. Copyright © 2008 Unisonic Technologies Co., Ltd QW-R201-006,E. AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY .. 71.5 Kb 2 pg. Datasheet

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3. Abstract: .. Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A .. 74.93 Kb 1 pg. Datasheet

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4. Abstract: .. Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A .. 74.93 Kb 1 pg. Datasheet

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5. Abstract: .. 2SC1815. 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6. T A. = 100°C. 25°C. – 55°C. 50. 20. 10. 50. 2. 1. 0.5. 0.2. 0.1. 0 0.4 0.8 1.2 1.6 2.0. T A = 25°C. 100. 80. 60. 40. 20. 0. I. C. , COLLECTOR CURRENT. (mA) Fig.1 Grounded emitter propagation .. 178.4 Kb 3 pg. Datasheet

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6. Abstract: .. 2SC1815. 2003-03-27 1. TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815. Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications. High .. 137.9 Kb 4 pg. Datasheet

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7. Abstract: .. ST 2SC1815. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. .. 248.28 Kb 2 pg. Datasheet

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8. Abstract: .. ST 2SC1815. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain .. 229.17 Kb 2 pg. Datasheet

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9. Abstract: .. ST 2SC1815. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current. gain .. 234.23 Kb 2 pg. Datasheet

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10. Abstract: .. ST 2SC1815. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current. gain .. 179.67 Kb 2 pg. Datasheet

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