Search Results: 1 - 10 of about 108 for 2N3055
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| 1. |  | 2N3055 | Advanced Semiconductor, Inc. | Silicon Transistor Selection Guide | Datasheet
384.14 Kb, 5 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 2. |  | 2N3055 | Boca Semiconductor | COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 | Datasheet
172.37 Kb, 3 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 3. |  | 2N3055 | Central Semiconductor | General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 | Datasheet
59.54 Kb, 1 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 4. |  | 2N3055 | Comset Semiconductors | Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 | Datasheet
133.99 Kb, 2 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 5. |  | 2N3055 | Continental Device India Limited | TO-3 Power Package Transistors | Datasheet
235.94 Kb, 3 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 6. |  | 2N3055 | Continental Device India Limited | Semiconductor Device Data Book 1996 | Datasheet
100.34 Kb, 1 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 7. |  | 2N3055 | Fairchild Semiconductor | Full Line Condensed Catalogue 1977 | Datasheet
42.57 Kb, 1 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 8. |  | 2N3055 | Ferranti Semiconductors | Quick Reference Guide 1985 | Datasheet
21.77 Kb, 1 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 9. |  | 2N3055 | Ferranti Semiconductors | Power Transistors 1977 | Datasheet
21.92 Kb, 1 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. | | 10. |  | 2N3055 | Ferranti Semiconductors | Shortform Data Book 1971 | Datasheet
103.64 Kb, 2 Pg. | Latest Datasheets, Buy Now!, Featured Products and Samples. |
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Contextual Search Results: 1 - 10 of about 131 for 2N3055
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Abstract: .. PRINCIPAL DEVICE TYPES 2N3055. GEOMETRY. PROCESS DETAILS. R1 (20-March 2006) Process GLASS .. |
28.78 Kb |
2 pg. |
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Abstract: .. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector .. |
147.73 Kb |
4 pg. |
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Abstract: .. Product Specification www.jm nic.com Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter .. |
147.73 Kb |
4 pg. |
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| 4. |
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Abstract: .. 2N3055 MJ2955. Complementary power transistors. Features ■ Low collector-emitter saturation voltage. ■ Complementary NPN - PNP transistors. Applications ■ General purpose. ■ Audio Amplifier .. |
75.55 Kb |
7 pg. |
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Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ STMicroelectronics PREFERRED. SALESTYPES ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar .. |
29.97 Kb |
4 pg. |
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Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ STMicroelectronics PREFERRED. SALESTYPES ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION. The 2N3055 is a silicon Epitaxial-Base Planar .. |
45.37 Kb |
4 pg. |
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Abstract: .. 2N3055 MJ2955. COMPLEMENTARY SILICON POWER TRANSISTORS. ■ ST PREFERRED SALESTYPES. ■ COMPLEMENTARY NPN-PNP DEVICES. DESCRIPTION. The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec .. |
45.37 Kb |
4 pg. |
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Abstract: .. INCHANGE Semiconductor isc Product Specification. isc Silicon NPN Power Transistor 2N3055. DESCRIPTION. ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter .. |
45.37 Kb |
4 pg. |
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Abstract: .. DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity .. |
38.89 Kb |
4 pg. |
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Abstract: .. 2N3055, MJ2955 Complementary Power Transistors. Page 1 31/05/05 V1.0. Designed for use in general-purpose amplifier and switching applications. Features: • • Power dissipation - PD = 115W at .. |
38.89 Kb |
4 pg. |
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